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| ZLLS350 SOD523 40V LOW LEAKAGE SCHOTTKY BARRIER DIODE SUMMARY VR = 40V; IFAV = 650mA; VF = 570mV typ @ 100mA; IR = 1A typ @ 30V DESCRIPTION Packaged in the SOD523 package this addition to the Zetex Low Leakage Schottky diode range offers an ideal low VF/IR performance combined with a low package height of 0.9mm making the device suitable for various converter, charger, and LED driver circuits. SOD523 FEATURES * Low VF * 380mA continuous current rating * Low profile SOD523 package (0.9mm) APPLICATIONS * DC - DC converters * Mobile telecomms * Charger circuits * LED driver circuits * MOSFET voltage protection circuits PINOUT ORDERING INFORMATION DEVICE ZLLS350TA ZLLS350TC REEL SIZE 7" 13" TAPE WIDTH 8mm embossed 8mm embossed QUANTITY PER REEL 3,000 units 10,000 units TOP VIEW DEVICE MARKING * 53 ISSUE 1 - MAY 2005 1 SEMICONDUCTORS ZLLS350 ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous reverse voltage Continuous forward current Average peak forward current; D.C. = 50% Non repetitive forward current t < 100 S < 10mS Power dissipation at T A =25C (a) Power dissipation at T A =25C (b) Operating and storage temperature range Junction temperature PD PD T stg Tj SYMBOL VR IF I FAV I FSM LIMIT 40 380 650 6.0 1.3 357 413 -55 to +150 150 UNIT V mA mA A A mW mW C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA R JA LIMIT 350 303 UNIT C/W C/W Junction to ambient (b) NOTES: (a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions. (b) As (a) above measured at t<5 secs. ISSUE 1 - MAY 2005 SEMICONDUCTORS 2 ZLLS350 CHARACTERISTICS ISSUE 1 - MAY 2005 3 SEMICONDUCTORS ZLLS350 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Reverse breakdown voltage Forward voltage SYMBOL V (BR)R VF MIN. 40 TYP. 63 380 425 520 780 Reverse current Diode capacitance Reverse recovery time IR CD t rr 1 3.5 1 450 520 635 1000 4 6 MAX. UNIT CONDITIONS V mV mV mV mV A pF nS I R =100 A I F =30mA* I F =50mA* I F =100mA* I F =275mA* V R =30V f=1MHz; V R =30V Switched from IF =100mA, to IR=100mA Measured at I R =10mA * Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. ISSUE 1 - MAY 2005 SEMICONDUCTORS 4 ZLLS350 CHARACTERISTICS ISSUE 1 - MAY 2005 5 SEMICONDUCTORS ZLLS350 PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters DIM Min A A1 A2 b1 c D - 0.000 0.600 0.160 0.080 0.700 Max 0.800 0.100 0.800 0.300 0.220 0.900 Min - 0.000 0.0236 0.0062 0.0031 0.0275 Max 0.0314 0.0039 0.0314 0.0118 0.0086 0.0354 E E1 L L1 1 Inches DIM Min 1.500 1.100 0.200 0.170 4 Max 1.700 1.300 0.400 0.230 10 Min 0.0590 0.0433 0.0078 0.0066 4 Max 0.0669 0.0511 0.0157 0.0090 10 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2005 SEMICONDUCTORS 6 |
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